Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Probe and Secondary Electron Microscopy

The availability of two-dimensional (2-D) dopant profiling techniques to Silicon Carbide (SiC) pn junction is discussed. We compared the results of scanning capacitance microscopy (SCM), scanning spreading resistance microscopy (SSRM), and secondary electron microscopy (SEM), where the cross-sections of a SiC wafer with n-type epi-layers and highly-doped p and n regions were used. The SSRM curr...

Microstructure, Mechanical and Tribological Properties of Reactive Magnetron Sputtered Titanium Carbide Coatings

This study describes the correlation between the microstructure, mechanical and tribological properties of Ti1-xCx coatings (with x being in the range of 0-1), deposited by reactive magnetron sputtering from a Ti target in Ar/C2H2 mixtures at ~200 °C. The mechanical and tribological properties were found to strongly depend on the chemical composition and the microstructure present. Very dense s...

Ohmic Contact of Cu/Mo and Cu/Ti Thin Layers on Multi-Crystalline Silicon Substrates

Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. The effects of process parameters such as film thickness, annealing duration and temp...

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Ohmic Contact with Enhanced Stability to Polycrystalline Silicon Carbide via Carbon Interfacial Layer

The development of electrical contacts to silicon carbide with low specific resistivity and stability is a critical requirement for harsh environment MEMS applications. In this paper, we present a novel method to lower the ohmic contact resistivity and enhance the stability of Pt contacts to polycrystalline 3C-SiC (poly-SiC) operated at elevated temperatures. In particular, nanocrystalline grap...